A Study on Modified Silicon Surface after CHF3/C2F6 Reactive Ion Etching
نویسندگان
چکیده
منابع مشابه
Effect of Process Parameters on the Surface Morphology and Mechanical Performance of Silicon Structures After Deep Reactive Ion Etching (DRIE)
The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to unders...
متن کاملCryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK
متن کاملReactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications
Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications Prakash N. K. Deenapanray1*,y, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia Department of Engineering, FEIT, The Australian National University, ...
متن کاملReactive ion etching
The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ETRI Journal
سال: 1994
ISSN: 1225-6463
DOI: 10.4218/etrij.94.0194.0014